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Tensile Strained Ge Quantum Dots (拉应力锗外延量子点）
科研动态 2013-08-05 15:38 已被浏览 3329 次
Ge/InGaAs 拉应力外延量子点
Tensile-strained Ge Epitaxy Quantum Dots on InGaAs
联系人：白煜副教授，电子邮件：ybai @ mail点xjtu点edu点cn
Contact: Professor Yu Bai, Email: ybai @ mail dot xjtu dot edu dot cn
使用MOCVD方法生长在InGaAs上的Ge外延量子点，其拉应力可以达到1.43%。是研究Ge在拉应力下的能带换位的很好平台。这种方法生长的量子点大小和密度可以调节，可以成为以拉应力Ge材料为激发层的远 红外激光器的材料平台.
Ge quantum dots grown on InxGa1-xAs (In>15%) via MOCVD. Quantum dots nucleation occurs at the step bunches on the InxGa1-xAs surface. In general, no misfit dislocations were found at the Ge/InGaAs interface, suggesting that there is no strain relaxation and the Ge structures were fully elastically strained to match the lattice constant of the virtual substrate. This was confirmed by Raman spectroscopy and the strain level of the QDs was found to be 1.43%. These quantum dots would in theory be direct bandgap, and could potentially be utilized in near-IR optical device.
详见/details in the following paper
Y. Bai, K.E. Lee, C. Cheng, M. L. Lee, and E. A. Fitzgerald,Growth of highly tensile-strained Ge on relaxed InxGa1-xAs by metal-organic chemical vapor deposition, Journal of Applied Physics 104, 084518 (2008).
原子力显微镜下的Ge/InGaAs 拉应力外延量子点
AFM image of Tensile-strained Ge Epitaxy Quantum Dots on InGaAs
美国专利授权
US Patent No.8063413B2
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